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etch process造句

"etch process"是什么意思  
造句與例句手機(jī)版
  • The resolution of an etching process is a measure of the fidelity of pattern transfer .
    刻蝕工藝的分辨率是圖形轉(zhuǎn)移保真度的量度。
  • Aluminium target with deep amplitude modulation fabricated by chemical wet etching process
    調(diào)制靶的化學(xué)腐蝕制備工藝研究
  • Studies on subsurface damage detection and wet-etching process of k9 optics
    9基片的亞表面損傷探測(cè)及化學(xué)腐蝕處理技術(shù)研究
  • Surface ramam spectrpscopy for in situ investigating silicon etching process
    前驅(qū)體法制備氮氧化硅納米線及其光學(xué)性能研究
  • In addition, the effect of collisions and a low source power can slow down the etching process
    碰撞效應(yīng)和低電源功率減緩刻蝕的進(jìn)程。
  • John has been trying to develop a new etching process for months and he's finally struck oil
    約翰已花了幾個(gè)月的時(shí)間來創(chuàng)造一種新的蝕刻工序,他最終獲得了成功。
  • The lithographic and etching process for a membrane creates a mesh of metal wires with silicon dioxide filling the space between them
    薄膜先以微影及蝕刻制程制作出金屬線路,線路之間則填入二氧化矽。
  • The most competitive technologies of transferring solid membrane mainly include bond and etch process and smart cut process
    最具競(jìng)爭(zhēng)力的轉(zhuǎn)移固體薄膜技術(shù)主要有鍵合加選擇性腐蝕工藝和注氫智能剝離工藝。
  • To approach as a resist in dry etching processing, etching properties of the films in oxygen plasma have been investigated
    為了探索該種薄膜在干刻蝕工藝過程中用作掩膜的可能性,還研究了它在氧離子體中的刻蝕性能。
  • Plasma etching has been widely used in the etching process of si devices . now the study is focused on the microfabrication of compound semiconductor
    等離子體干法刻蝕在硅器件的微細(xì)加工中已經(jīng)得到廣泛應(yīng)用,目前研究的焦點(diǎn)集中在化合物半導(dǎo)體。
  • It's difficult to see etch process in a sentence. 用etch process造句挺難的
  • Observation on the variation of surface morphology during the etching process indicates that the grain boundary and te precipitates will be shown earlier than the dislocations
    本文研究了晶片的腐蝕過程,觀察隨腐蝕程度的逐漸加深,晶片表面缺陷蝕坑形貌的變化。
  • Via the experiment, the best etching process of etching insb-in material with chclfi plasma is confirmed . and the mechanism is also analyzed and discussed
    通過實(shí)驗(yàn)確定該條件下chclf_2等離子體刻蝕insb-in的最佳工藝,并分析探討chclf_2等離子體刻蝕insb-in薄膜的機(jī)理。
  • We discuss a low cost fabrication method of a diffractive microlens with high performance for both blue and red dvd objective lenses, which consists of single-step photolithography and a wet etching process
    摘要采用單步光刻和濕法腐蝕工藝,低成本快速制作面向高性能藍(lán)光和紅光dvd光學(xué)頭物鏡的衍射微透鏡。
  • For example, it is challenging for the chemical etching process to drop below a 1.5 aspect ratio while, with laser cutting and electroforming, apertures can be produced that have a 1 : 1 aspect ratio to the stencil thickness
    比如,表觀比率低于1.5對(duì)于化學(xué)腐蝕試一大挑戰(zhàn),而激光切割和電鑄可制成表觀比率為1.1的鋼網(wǎng)。
  • Because the etched pattern will be effected by many factors, many technical difficulties such as getting the ideal etched pattern and monitoring the etching process have not been solved yet
    因影響半導(dǎo)體激光誘導(dǎo)液相腐蝕效果的因素很多,要得到理想的腐蝕圖樣以及監(jiān)控腐蝕進(jìn)程有著很大的技術(shù)難度,至今沒有得到有效解決。
  • The results show that amorphous carbon films have high etching resistance against oxygen plasma, and etch rates of the films correlated not only with etching processing parameters, also with deposition conditions
    結(jié)果表明非晶碳膜對(duì)于氧離子體具有高的抗刻蝕性,其刻蝕率不僅與刻蝕的過程參量有關(guān),而且決定于膜的沉積條件。
  • In order to fabricate the soi rib waveguides, a reliable and relatively mature process including image reversal lithography, lift-off technique and icp etching process is acquired through a lot of experiments
    在制作工藝方面,摸索出一套相對(duì)行之有效的soi光波導(dǎo)制作工藝流程,在圖像反轉(zhuǎn)光刻以及l(fā)ift-off金屬剝離等方面,得到了一些比較成熟的工藝參數(shù)。
  • It is very importance to analyze the evolution of microscopic surface features, which impact on the etching surface shape in solid etching process . much theoretical and experimental study point out that the different etching surface shapes by the plasma beam with same energy will be different
    隨著衍射光學(xué)元件的應(yīng)用和半導(dǎo)體工業(yè)的發(fā)展,對(duì)刻蝕工藝中存在的導(dǎo)致刻蝕表面面形發(fā)生各種形變的諸多影響因素的數(shù)學(xué)分析是一個(gè)比較復(fù)雜和重要的問題。
  • We give some useful analyses and the computer simulations for the ion etching process . compared with the atomic force microscope ( afm ) scanning photograph of the etching surface, the theoretical results prove that these simulation analyses assure the precision required by this problem, so these mathematical models are reasonable and correct . the analysis method in this paper is useful to analyze etching process, and it can also afford some valuable reference to etching technology
    在本論文我們主要利用這個(gè)數(shù)學(xué)模型,對(duì)使用離子束刻蝕制作單臺(tái)階光柵的臺(tái)階與溝槽部分的表面面形隨時(shí)間的演變過程分別進(jìn)行了計(jì)算機(jī)模擬分析,并通過把理論結(jié)果與在實(shí)驗(yàn)中得到的刻蝕表面在原子力顯微鏡(afm)下拍攝的照片進(jìn)行比較,結(jié)果說明這種模擬分析能夠保證對(duì)該問題分析所要求的精度,從而也證明了理論模型的合理性和正確性。
  • We give some useful analyses and the computer simulations for the ion etching process . compared with the atomic force microscope ( afm ) scanning photograph of the etching surface, the theoretical results prove that these simulation analyses assure the precision required by this problem, so these mathematical models are reasonable and correct . the analysis method in this paper is useful to analyze etching process, and it can also afford some valuable reference to etching technology
    在本論文我們主要利用這個(gè)數(shù)學(xué)模型,對(duì)使用離子束刻蝕制作單臺(tái)階光柵的臺(tái)階與溝槽部分的表面面形隨時(shí)間的演變過程分別進(jìn)行了計(jì)算機(jī)模擬分析,并通過把理論結(jié)果與在實(shí)驗(yàn)中得到的刻蝕表面在原子力顯微鏡(afm)下拍攝的照片進(jìn)行比較,結(jié)果說明這種模擬分析能夠保證對(duì)該問題分析所要求的精度,從而也證明了理論模型的合理性和正確性。
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